| 摘要 |
PURPOSE: To obtain a composite material excellent in plastic workability, and to provide a method of its manufacture, a heat-liberation substrate for semiconductor device, and a semiconductor device using same. CONSTITUTION: The composite material consists of a metal and an inorganic compound and this inorganic compound has a dendrite or rod-liek form. Particularly, the composite material is a copper matrix composite having a composition consisting of 10-55 vol.% cuprous oxide (Cu2O) and the balance copper (Cu) with inevitable impurities and having (5x10-6 to 17x10-6)/ deg.C coefficient of linear expansion in the temperature range between room temperature and 300 deg.C and (100 to 380) W/m.k thermal conductivity. This composite material can be manufactured by a series of melting, casting, and working processes and is applicable to a cooling wheel for a semiconductor device. |
