SEMICONDUCTOR DEVICE

摘要

PURPOSE:To provide a semiconductor device such as a surface gate type static induction transistor in which a backward diode is built and which facilitates a high speed switching operation. CONSTITUTION:A metal layer 9a which is electrically connected to an N<->-type source region 7 is provided on the upper surface of an N<->-type epitaxial layer 3 which is provided at an arbitrary position in the circumference of a transistor region. A Schottky barrier diode region 14 is formed with a Schottky junction between the metal layer 9a and the N<->-type epitaxial layer 3 at an arbitrary position. Further, an annular guard ring region 12 is provided in the upper layer part of the N<->-type epitaxial layer 3 beneath the circumferential edge of the metal layer 9a.