| 摘要 |
PURPOSE: To provide a process of decreasing defects between the levels of a semiconductor chip, which is formed with via open parts using an RIE process. CONSTITUTION: Melallized levels 15 are covered with such a comparatively thick non-conformal oxide layer 24 as a quartz layer (SiO2 layer) formed by a sputtering method. Then, this layer 24 is covered with a blanket 20 consisting of such a comparatively thin oxide layer, which can stand an RIE, as an aluminium oxide layer (Al2 O3 layer) or a yttrium oxide layer (Y2 O3 layer). A mask having exposed via open parts is formed on the surface of this aluminium oxide layer 20 by a prior art technique and the aluminium oxide layer 20 in these opening regions is removed. The Al2 O3 layer 20 is etched using a wet etching method using BCL3 gas, for example, and O2 gas or H3 PO4 gas. Then, vias 22 are formed using an RIE process.
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