| 摘要 |
PROBLEM TO BE SOLVED: To obtain an etching method allowing uniform batch treatment in the etching of a semiconductor substrate. SOLUTION: After mixing an etching liquid 1 consisting of hydrochloric acid and a nitric acid in a beaker 2 by a rate of 1:2, the beaker temperature inside the tank 3 is controlled to be 40 deg.C. Next, a rotary plate 4, to which four sheets of 2 inch InP substrates 6 are fixed, is immersed in an etching liquid, condition setting, wherein the number of revolution of a rotary control device 5 is 80rpm and a reverse time interval of substrate rotation is 1min, is performed, and etching is started. Uniform treatment within±10μm to a target substrate thickness becomes possible by diffusing an etching liquid of high activity on an InP substrate by inversion.
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