发明名称 CHARGED PARTICLE BEAM EXPOSURE COMPENSATING PROXIMITY EFFECT
摘要 A subject pattern and a lower layer pattern are divided into small regions of a constant dimension using identical mesh of division. Considering of the spreading of charged particle beam due to backward scattering, the small region is set to be, for example, a few mu m square. An irradiation energy on each small region is determined by taking backward scattering from lower level pattern into account. Calculation is simplified because a pattern is represented by a pattern areal density. A region with a lower level pattern and a region without a lower level pattern can be exposured by charged particle beam with a comparable accuracy.
申请公布号 KR0161711(B1) 申请公布日期 1999.02.01
申请号 KR19940022620 申请日期 1994.09.08
申请人 FUJITSU LIMITED 发明人 KANATA, HIROYUKI
分类号 H01L21/027;G03F7/20;H01J37/302 主分类号 H01L21/027
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