| 摘要 |
Capacitors are formed on an insulating film covering the surface of a semiconductor substrate. Each capacitor is constituted of a lower electrode layer of doped silicon, a dielectric film of silicon oxide formed on the lower electrode and an upper electrode layer of polycide formed on the dielectric film. Capacitors are divided into first and second groups. In the first group, the lower electrode layers are interconnected to form a first terminal and the upper electrode layers are interconnected to form a second terminal. In the second group, the upper electrodes are all connected to the first terminal and the lower electrodes are all connected to the second terminal. A capacitor device is provided which mitigates a capacitance value change dependency upon an applied voltage and is easy to be manufactured.
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