发明名称 Low current consumption semiconductor memory device
摘要 A semiconductor memory device that includes an input buffer being inputted a write data from outside to buffer the write data and a control circuit putting the input buffer into an inactive state during a read operation and putting the input buffer into an active state when a read mask signal is inputted thereafter is provided.
申请公布号 US7548465(B2) 申请公布日期 2009.06.16
申请号 US20080054961 申请日期 2008.03.25
申请人 FUJITSU MICROELECTRONICS LIMITED 发明人 YAMAGUCHI SHUSAKU;TOMITA HIROYOSHI
分类号 G11C7/00 主分类号 G11C7/00
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