发明名称 Stacked memory device and system
摘要 A stack memory device may include a core chip and a base chip. The core chip may include a data receiver, a strobe signal generation unit, and a test register. The data receiver may be configured for receiving data outputted from the core chip through a first normal port. The strobe signal generation unit may be configured to generate a data strobe signal based on one of a normal strobe signal and a test strobe signal depending on an operation mode. The test register may store data outputted from the data receiver in response to the data strobe signal.
申请公布号 US9396777(B1) 申请公布日期 2016.07.19
申请号 US201514724027 申请日期 2015.05.28
申请人 SK hynix Inc. 发明人 Lee Dong Uk
分类号 G11C7/00;G11C7/22;G11C8/06;G11C8/18;G11C29/00;G11C5/02 主分类号 G11C7/00
代理机构 William Park & Associates Ltd. 代理人 William Park & Associates Ltd.
主权项 1. A stacked memory device, comprising: a core chip and a base chip, wherein the base chip comprises: a data receiver configured to receive data outputted from the core chip through a first normal port; a strobe signal generation unit configured to generate a data strobe signal based on one of a normal strobe signal and a test strobe signal depending on an operation mode, wherein the test strobe signal is generated based on a signal received through a first test port; and a test register configured to store data outputted from the data receiver in response to the data strobe signal.
地址 Icheon-si, Gyeonggi-do KR