发明名称 Memory device and operating method of same
摘要 A memory device includes a memory array and a logic unit communicatively coupled to the memory array. The memory array includes a plurality of pages for storing array data and a plurality of extra arrays respectively corresponding to the plurality of pages for storing extra data. The logic unit is configured to receive a read instruction, and perform a read operation in a first access mode or in a second access mode. In the first access mode, the logic unit sequentially reads out the array data stored in the plurality of pages. In the second access mode, the logic unit sequentially reads out the array data stored in the plurality of pages and the extra data stored in the plurality of extra arrays.
申请公布号 US9396769(B1) 申请公布日期 2016.07.19
申请号 US201514619810 申请日期 2015.02.11
申请人 Macronix International Co., Ltd. 发明人 Chang Kuen-Long;Chen Ken-Hui;Hsieh Ming-Chih
分类号 G11C7/00 主分类号 G11C7/00
代理机构 Finnegan, Henderson, Farabow, Garrett & Dunner LLP 代理人 Finnegan, Henderson, Farabow, Garrett & Dunner LLP
主权项 1. A memory device, comprising: a memory array including a plurality of pages for storing array data and a plurality of extra arrays respectively corresponding to the plurality of pages for storing extra data; a non-volatile memory storing access information that specifies whether to perform a memory access operation in a first access mode or a second access mode; and a logic unit coupled to the memory array and the non-volatile memory, wherein in the first access mode, the logic unit accesses the array data stored in the plurality of pages, and in the second access mode, the logic unit accesses the array data stored in the plurality of pages and the extra data stored in the plurality of extra arrays.
地址 Hsinchu TW