发明名称 NONVOLATILE SEMICONDUCTOR STORAGE
摘要 <p>PURPOSE:To eliminate excess writing, erasing by omitting writing of writing to erasing of an auto erasing function when all bit '0' is decided in a data block. CONSTITUTION:When an output 29 of all '1' deciding latch 8b is an H level, data ''0'' is written at the time of writing all '0' to reading as usual in the case of auto erasing, but even in this case, if an output of the latch 8b is an L level, writing is not executed. An erasing circuit does not output a high potential to a source line, and does not erase in the block. Thus, the output 29 of the latch 8b skips all '0' writing to erasing cycle at the time of an L level. When an output 40 of all '0' deciding latch 8a is an H level, a writing circuit writes ''0'' at the time of writing cycle in the case of the auto erasing, but does not write even in the case of all '0' writing cycle at the time of L level, and erasing is merely executed.</p>
申请公布号 JPH0660680(A) 申请公布日期 1994.03.04
申请号 JP19920237702 申请日期 1992.08.12
申请人 MITSUBISHI ELECTRIC CORP 发明人 NOGUCHI KENJI
分类号 G11C17/00;G11C16/02;G11C16/06;(IPC1-7):G11C16/06 主分类号 G11C17/00
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