| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of selectively implanting a channel impurity in Si substrate regions beneath gate electrodes self-aligningly, without increasing the number of exposure times. SOLUTION: Gate electrodes 15 are formed through a gate insulation film 14 on a semiconductor substrate 11 and element isolations, the gate electrodes are formed so as to adjoin both sides of a certain one gate electrode, and a skew ion implanting is made so that the shadows of adjacent gate electrodes overlie source or drain regions 19, thus making it possible to selectively implant a channel impurity in Si substrate regions 13 beneath the gate electrodes.
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