| 摘要 |
PROBLEM TO BE SOLVED: To provide a JFET which is superior in breakdown voltage and will not be easily affected by impurity concentration or variations in the thickness of a channel region or the like. SOLUTION: The JFET is provided with a second conductivity-type SiC film 2 formed on an SiC substrate 1, a first conductivity-type SiC film 3, including a channel region 4 formed on the second conductivity-type SiC film, source and drain regions 5 and 6 formed on the first conductivity-type SiC film, so as to be formed on the both sides o the channel region, gate electrodes 13 formed on the second conductivity-SiC film, and a conductive film 7 which is brought into contact on the channel region.
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