| 摘要 |
A nonvolatile semiconductor memory device includes a matrix (1) of nonvolatile erasable memory cells (M11), each memory cell comprising a memory cell transistor. Erase verification circuitry (623, 624) operates, following an erase operation on a plurality of the said memory cells of the matrix, to carry out an erase verify operation to verify that each cell of the said plurality has been erased sufficiently. In this cicruitry, threshold voltage measuring means (623, 626) produce, for a set (605) of those memory cells, a measurement signal representative of a threshold voltage of the said memory cell transistor of that cell of the set having the highest erasure rate. Reference signal generating means (628) produce a reference signal (Vref) representative of a predetermined highest-erasure-rate threshold voltage, being the post-erasure threshold voltage required of that cell of the matrix having the highest erasure rate. Comparison means (625) compare the or each said measurement signal with the reference signal and judge, based on the comparison(s), whether the threshold voltage of any one of the memory cells of the plurality has reached the predetermined highest-erasure-rate threshold voltage. <IMAGE> |
