| 摘要 |
A method of forming a storage electrode in a semiconductor device is provided to obtain the capacitance by increasing the effective surface of the storage electrode. Sub-layers(311,313) having different etching rate are formed on a semiconductor substrate(100) to form a lower frame layer(310), and then an upper frame layer(330) is formed on the lower frame layer. The upper and lower frame layers are selectively etched to from a through-opening hole(301). The lower frame layer exposed through the sidewall of the opening hole is etched to induce a bent shape due to an etching rate of the sub-layers. A storage electrode layer is formed along a profile of the opening hole.
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