| 摘要 |
PROBLEM TO BE SOLVED: To sufficiently assure lithography process tolerance, such as exposure tolerance and depth of focus, while reducing the line width difference by the pattern density of resist patterns without exerting load on manufacturing a mask. SOLUTION: In forming the resist patterns where the patterns of varying in the pattern density, such as isolated patterns and L/S patterns, coexist, the overlap width a1 (isolated patterns) and overlap width a2 (L/S patterns) of the translucent regions of the phase shift mask used for high-resolution exposure and the light shielding regions of a binary mask, and the line width b1 (isolated patterns) and line width b2 (L/S patterns) of the phase shift mask are respectively corrected in the direction where the line width difference of the respective resist patterns is made smaller. |
