发明名称 |
Sense amplifiers having MOS transistors therein with different threshold voltages and/or that support different threshold voltage biasing |
摘要 |
A sense amplifier includes a pair of sense bit lines and first and second MOS sense amplifiers. The first MOS sense amplifier has a first pair of MOS transistors of first conductivity type therein, which are electrically coupled across the pair of sense bit lines. This electrically coupling is provided so that each of the first pair of MOS transistors has a first source/drain terminal electrically connected to a corresponding one of the pair of sense bit lines and the second source/drain terminals of the first pair of MOS transistors are electrically connected together. The first pair of MOS transistors of first conductivity type are configured to have different threshold voltages or support different threshold voltage biasing. The second MOS sense amplifier has a first pair of MOS transistors of second conductivity type therein, which are electrically coupled across the pair of sense bit lines.
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申请公布号 |
US7345939(B2) |
申请公布日期 |
2008.03.18 |
申请号 |
US20050185351 |
申请日期 |
2005.07.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE HYUN-SEOK;CHOI JONG-HYUN;CHUN KI-CHUL;LEE JONG-EON |
分类号 |
G11C7/02 |
主分类号 |
G11C7/02 |
代理机构 |
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主权项 |
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