发明名称 |
Ion implanted eutectic gallium arsenide solar cell |
摘要 |
An improved gallium arsenide solar cell is provided by ion implanting both the top and bottom of a plural vertical PN junction eutectic gallium arsenide cell body to obtain an electrical drift field, with multiple ion implants progressively larger in dose and progressively lower in implant energies to provide a P-type ion implanted top layer having a common connection to all P regions of the cell body and an N-type ion implanted bottom layer having a common connection to all N regions of the cell body. The implanted regions of the cell are pulsed electron beam annealed at room temperature.
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申请公布号 |
US4116717(A) |
申请公布日期 |
1978.09.26 |
申请号 |
US19760748584 |
申请日期 |
1976.12.08 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE AIR FORCE |
发明人 |
RAHILLY, WILLIAM P. |
分类号 |
H01L31/0352;H01L31/068;H01L31/18;(IPC1-7):H01L31/06 |
主分类号 |
H01L31/0352 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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