| 摘要 |
PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to simplify a fabricating process and to improve productivity, by forming an Al2O3 dielectric layer of which the dielectric constant is large so that an additional process for increasing the surface area is unnecessary. CONSTITUTION: An aluminum lower electrode(26a) in contact with a predetermined region of a semiconductor substrate(21) is formed. The aluminum lower electrode is oxidized to form the Al2O3 dielectric layer(27) on the aluminum lower electrode. A metal layer is deposited on the Al2O3 dielectric layer to form an upper electrode(28).
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