| 摘要 |
<p>An anisotropic etching apparatus and method by which a stable anisotropic etching of the surface of a wafer is performed, the number of ν pyramids formed on the etched surface of a semiconductor wafer is small, and the etching depth is uniformed, wherein during the anisotropic etching, the vaporizing components of an anisotropic etchant are supplied little by little according to the amount of vaporized components of the anisotropic etchant from its surface. Another anisotropic etching apparatus is also disclosed by which contamination of an etchant is prevented, the vaporized components of the etchant is prevented from catching fire, the composition of the etchant is hardly changed, thereby the anisotropic characteristics are stable, ν pyramids are few formed, and the etching depth in the wafer face is made even, wherein when a circulating pump is operated, a heated medium in a heating medium jacket is allowed to flow into a heating medium circulation passage, heated by heating means provided in the heating medium passage, returned to the heating medium jacket, and the anisotropic etchant stored in an anisotropic etching bath is heated by the returned hot heating medium.</p> |
