Cu THIN FILM MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method of forming a Cu thin film which effectively prevents fine open holes from growing near the interface of a first copper film and a second copper film formed thereon by the electrolytic copper plating, in the Cu film forming method comprising a Cu-CVD step of forming the first copper film to be a Cu seed film by the CVD method good in coverage and a plating step of forming the second copper film on the first copper film by the electrolytic copper plating. SOLUTION: Between a Cu-CVD step of forming a first copper film (as a deposit film) to be a Cu seed film and a plating step, a reforming step is inserted to reform the first copper film by exposing the first copper film to an active atmosphere using any of free active seeds produced by plasma or thermal decomposition of molecules.