| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a ridge wageguide path-type nitride semiconductor laser element having a high kink level. <P>SOLUTION: The nitride semiconductor laser element is provided with a semiconductor lamination structure comprising a plurality of chemical compound layers 102-109 containing a nitride active layer 105 on a substrate 101. The semiconductor lamination structure has ridge stripes for containing horizontal light, has a first buried layer 112 on a ridge bottom surface 114 positioned on both sides of the ridge stripes, and has a second buried layer 113 on the first buried layer. The first buried layer has absorbing characteristics to light of laser oscillation wavelength, and the second buried layer has electric non-conductance and is transparent to light of laser oscillation wavelength. The first buried layer is thinner than the second buried layer, and the light of laser oscillation wavelength can permeate the first buried layer to seep up to the second buried layer. <P>COPYRIGHT: (C)2007,JPO&INPIT |
