发明名称 METHOD OF MANUFACTURING ZINC OXIDE SINGLE CRYSTAL SUBSTRATE
摘要 <P>PROBLEM TO BE SOLVED: To form a step terrace structure on the surface of a zinc oxide single crystal substrate (ZnO wafer). <P>SOLUTION: The method of manufacturing a zinc oxide single crystal substrate includes a cutting step to cut a vertical plane to the C axis of a zinc oxide single crystal at a specified thickness so as to form it into an element formation plane, a shaping step to shape the element formation plane to a specified shape, a rough polishing step to polish the element formation plane, a heating step to apply a heat at least to the element formation plane, and a fine polishing step to polish the element formation plane by the chemical mechanical polishing method thereafter. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007103427(A) 申请公布日期 2007.04.19
申请号 JP20050287789 申请日期 2005.09.30
申请人 TOKYO DENPA CO LTD 发明人 MAEDA KATSUMI;SATO MITSURU
分类号 H01L21/304;H01L33/32 主分类号 H01L21/304
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