| 摘要 |
<p>A semiconductor device and its manufacturing method are provided to reduce power consumption by reducing the number of circuit elements and the number of wiring operations in bit units. Each of first and second memory elements includes a first electrode. The first memory element includes a first electrode formed on an insulating surface, a second electrode formed on the first electrode, a material layer inserted between the first and the second electrodes, and a thin film transistor electrically connected to the first and the second memory elements. In each of the first and the second memory elements, an electrical resistance is changed by applying a voltage. A voltage value of the voltage changed in the first memory element is different from a voltage value of the voltage changed in the second memory element. The second electrode of the first memory element is common to the second memory element.</p> |
