| 摘要 |
PROBLEM TO BE SOLVED: To enable to measure LPDs of≤100 nm in a ä110} wafer, thereby preventing deterioration of surface roughness, enabling to determine the surface state and enabling quality evaluation of the wafer. SOLUTION: In an epitaxial silicon wafer, an epitaxial layer is grown on a silicon wafer having a plane inclined from a ä110} plane of a silicon single crystal as a main surface. The silicon wafer for growing the epitaxial layer thereon is configured in such a way that an inclination angle azimuth for inclining the ä110} plane is set in the range of 0-45°as measured from a <100> orientation parallel to the ä110} plane toward a <110> direction. COPYRIGHT: (C)2008,JPO&INPIT |
