| 摘要 |
PROBLEM TO BE SOLVED: To secure a sufficient writing period when writing data and to reduce erroneous writing when reading data without particularly controlling the timing. SOLUTION: This driver circuit for a semiconductor memory having magnetoresistive elements connected to bit lines BLix (i= 0, 1, ..., m, ..., M; x=0, 1) has a logic circuit to make predetermined logic calculations for the voltages on the row select line CSL and data writing control lines BFPx, BFNx (x=0, 1) and to output a pair of control circuits showing this logic calculation result, and a P-type transistor P1 and an N-type transistor N1 connected in series between the power source voltage VDD2 and the ground voltage Vgnd and to generate the control voltages of the bit line BLix (i= 0, 1, ..., m, ..., M; x=0, 1) based on the pair of control signals from the logic circuit. COPYRIGHT: (C)2008,JPO&INPIT
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