Method For the Production of C-Plane Oriented Gan Substrates or AlxGa1-xN Substrates

摘要

The invention relates to a method for producing c-plane GaN substrates or Al_xGa_1-xN substrates using an original substrate. Said method is characterized by the following steps: a tetragonal (100)-oriented or (-100)-oriented original LiAlO₂ substrate is used; said original substrate is nitrided in a nitrogen compound-containing atmosphere at temperatures lying below the decomposition temperature of LiAlO₂; a nucleation layer is grown at temperatures ranging between 500° C. and 700° C. by adding GaCl or AlCl or a mixture of GaCl and AlCl in a nitrogen compound-containing atmosphere; single-crystalline c-plane-oriented GaN or Al_xGa_1-xN is grown on the nucleation layer at temperatures ranging between 900° C. and 1050° C. by means of hydride vapor phase epitaxy (HVPE) with GaCl or AlCl or a GaCl/AlCl mixture in a nitrogen compound-containing atmosphere; and the substrate is cooled.