发明名称 |
Bidirectional semiconductor switch |
摘要 |
A bidirectional semiconductor switch employs two insulated gate semiconductor devices such as insulated gate bipolar transistors (IGBTs) that are connected oppositely in parallel, with the collector of one of the IGBTs being connected to the emitter of the other. The gates of the IGBTs are biased by gate controllers that are potentially independent of each other. The semiconductor switch is capable of controlling a direct current as well as an alternating current at a low ON-state voltage, reducing a conduction loss, and improving efficiency.
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申请公布号 |
US5608237(A) |
申请公布日期 |
1997.03.04 |
申请号 |
US19950403519 |
申请日期 |
1995.03.13 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
AIZAWA, YOSHIAKI;KATOH, TOSHIMITU |
分类号 |
H01L29/78;H01L23/48;H01L25/07;H01L25/18;H01L27/04;H01L27/088;H01L29/739;H01L31/12;H03K17/00;H03K17/56;H03K17/567;H03K17/68;H03K17/687;(IPC1-7):H01L29/74;H01L23/58;H01L31/111 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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