| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device having an N-type MOS transistor for protecting ESD that restrains an off leak current without increasing processes and occupation areas and has a shallow trench separation structure having sufficient ESD protection functions. <P>SOLUTION: In the N-type MOS transistor for protecting ESD having a shallow trench structure for element separation, the drain region of the N-type MOS transistor for protecting ESD is arranged separately from the shallow trench separation region in a region adjacent to at least the gate electrode of the N-type MOS transistor for protecting ESD. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
