| 摘要 |
PROBLEM TO BE SOLVED: To prevent raw material gas supply at a low flow rate from delaying, to improve production efficiency.SOLUTION: In a plasma film deposition apparatus 100, before pyridine, a raw material gas, is supplied at a low flow rate for nucleus formation to a first film deposition chamber 121 or a second film deposition chamber 122, a gas remaining in a raw material gas supply pipe 113 is evacuated in advance by a vacuum pump 130 via a communication pipe 140. After the remaining gas is evacuated, the raw material gas (pyridine) of which the flow rate is adjusted to be a low flow rate by a flow rate adjusting device 113c is supplied to the first film deposition chamber 121 or the second film deposition chamber 122.SELECTED DRAWING: Figure 1 |
