| 摘要 |
Provided is a dry etching method capable of etching a silicon oxide and polycrystalline silicon at the same rate. The dry etching method comprises plasmatizing a stack layer of a silicon oxide layer and a silicon layer with a dry etchant to apply a bias voltage thereto so as to be etched. The dry etchant contains fluorine-containing unsaturated hydrocarbon represented by C_3H_xF_y, wherein x is an integer from 1 to 5, y is an integer from 1 to 5, and x+y equals 4 or 6, and 7 fluorinated iodine. The volume of the 7 fluorinated iodine contained in the dry etching solution is within a range from 0.1 to 1.0 times the volume of the fluorine-containing unsaturated hydrocarbon contained in the dry etching solution. |
