Electronic die singulation method

摘要

In one embodiment, die are singulated from a wafer having a back layer by placing the wafer onto a carrier substrate with the back layer adjacent the carrier substrate, forming singulation lines through the wafer to expose the back layer within the singulation lines, and applying a pressure substantially uniformly along the second major surface to batch separate the layer of material in the singulation lines. In one embodiment, a fluid filled vessel can be used to apply the pressure.

主权项

1. A method of singulating a wafer comprising:
providing a wafer having a plurality of die formed on the wafer and separated from each other by spaces, wherein the wafer has first and second opposing major surfaces, and wherein a layer of material is formed along the second major surface; placing the wafer onto a carrier substrate; singulating the wafer through the spaces to form singulation lines, wherein singulating comprises stopping in proximity to the layer of material; placing the wafer and carrier substrate within a chamber, the chamber at least partially enclosing a pressure transfer vessel, wherein the pressure transfer vessel contains a fluid; and moving a compression structure against the pressure transfer vessel thereby applying a pressure substantially uniformly along the second major surface to separate the layer of material in the singulation lines.