| 发明名称 | Electrostatic discharge protection | ||
| 摘要 | A device comprising an electrostatic discharge protection structure, an ion sensitive field effect transistor (ISFET) having a floating gate, and a sensing layer located above the floating gate. The device is configured such that the electrical impedance from the sensing layer to the electrostatic discharge protection structure is less than the electrical impedance from the sensing layer to the floating gate. The device can be fabricated in a standard CMOS process. | ||
| 申请公布号 | US9431387(B2) | 申请公布日期 | 2016.08.30 |
| 申请号 | US201514937847 | 申请日期 | 2015.11.10 |
| 申请人 | DNAE GROUP HOLDINGS LIMITED | 发明人 | Garner David;Bai Hua |
| 分类号 | H01L27/02;H01L29/66;G01N27/414 | 主分类号 | H01L27/02 |
| 代理机构 | Nixon & Vanderhye PC | 代理人 | Nixon & Vanderhye PC |
| 主权项 | 1. A device comprising an electrostatic discharge protection structure, an ion sensitive field effect transistor (ISFET) having a floating gate, and a sensing layer located above the floating gate, the device being configured such that the electrical impedance from said sensing layer to the electrostatic discharge protection structure is less than the electrical impedance from said sensing layer to the floating gate and wherein the device is configured such that, in use, said sensing layer contacts a fluid sample. | ||
| 地址 | London GB | ||