发明名称 |
Thyristor-based memory and its method of operation |
摘要 |
A thyristor-based memory may comprise a thyristor accessible via an access transistor. A temperature dependent bias may be applied to at least one of a supporting substrate and an electrode capacitively-coupled to a base region of the thyristor. The voltage level of the adaptive bias may change with respect to temperature and may influence and/or compensate an inherent bipolar gain of the thyristor in accordance with the change in bias and may enhance its performance and/or reliability over a range of operating temperature. In a particular embodiment, the thyristor may be formed in a layer of silicon of an SOI substrate and the adaptive bias coupled to a supporting substrate of the SOI structure.
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申请公布号 |
US7893456(B1) |
申请公布日期 |
2011.02.22 |
申请号 |
US20090368226 |
申请日期 |
2009.02.09 |
申请人 |
T-RAM SEMICONDUCTOR, INC. |
发明人 |
NEMATI FARID;YANG KEVIN J. |
分类号 |
H01L29/74;H01L31/111 |
主分类号 |
H01L29/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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