| 发明名称 | Semiconductor device | ||
| 摘要 | A semiconductor device includes: a p-type semiconductor layer; an n-type semiconductor layer connected with the p-type semiconductor layer; a first electrode layer formed on the n-type semiconductor layer; and a second electrode layer formed on the p-type semiconductor layer. The first electrode layer and the second electrode layer are electrically connected such as to each operate at an identical potential. The second electrode layer is connected with at least a part of a surface of the first electrode layer which is opposite to a surface of the first electrode layer that is in contact with the n-type semiconductor layer. | ||
| 申请公布号 | US9443950(B2) | 申请公布日期 | 2016.09.13 |
| 申请号 | US201314104998 | 申请日期 | 2013.12.12 |
| 申请人 | TOYODA GOSEI CO., LTD. | 发明人 | Oka Toru;Tanaka Nariaki |
| 分类号 | H01L29/06;H01L29/45;H01L21/04;H01L21/285;H01L29/66;H01L29/78;H01L29/20;H01L29/16;H01L29/40;H01L29/417;H01L29/10 | 主分类号 | H01L29/06 |
| 代理机构 | McGinn IP Law Group, LLC | 代理人 | McGinn IP Law Group, LLC |
| 主权项 | 1. A semiconductor device, comprising: a p-type semiconductor layer; an n-type semiconductor layer connected with the p-type semiconductor layer; a first electrode layer formed on the n-type semiconductor layer; and a second electrode layer formed on the p-type semiconductor layer, wherein the first electrode layer and the second electrode layer are electrically connected such as to each operate at an identical potential, and wherein the second electrode layer is disposed on at least a part of a top surface of the first electrode layer which is opposite to a bottom surface of the first electrode layer, the bottom surface of the first electrode layer being disposed on a surface of the n-type semiconductor layer. | ||
| 地址 | Kiyosu-Shi, Aichi-Ken JP | ||