发明名称 Multi-step system and method for curing a dielectric film
摘要 A multi-step system and method for curing a dielectric film in which the system includes a drying system configured to reduce the amount of contaminants, such as moisture, in the dielectric film. The system further includes a curing system coupled to the drying system, and configured to treat the dielectric film with ultraviolet (UV) radiation and infrared (IR) radiation in order to cure the dielectric film.
申请公布号 US9443725(B2) 申请公布日期 2016.09.13
申请号 US201514877136 申请日期 2015.10.07
申请人 Tokyo Electron Limited 发明人 Liu Junjun;Lee Eric M.;Toma Dorel I.
分类号 H01L21/42;H01L21/02;H01L21/67;B05D3/06 主分类号 H01L21/42
代理机构 Oblon, McClelland, Maier & Neustadt, L.L.P 代理人 Oblon, McClelland, Maier & Neustadt, L.L.P
主权项 1. A method of treating a dielectric film, comprising: disposing a substrate, having a dielectric film thereon, on a substrate holder in a processing system for treating the dielectric film, the substrate holder having a heating element therein; heating the substrate by controlling the heating element; exposing the dielectric film to infrared (IR) radiation to facilitate a first treating mechanism within the dielectric film; exposing the dielectric film to ultraviolet (UV) radiation to facilitate a second treating mechanism that is different from the first mechanism within the dielectric film; and treating the dielectric film by varying the delivery of the IR and UV radiation to the dielectric film to facilitate the first and second mechanism at different stages of the treating such that target properties for the dielectric film are achieved.
地址 Minato-ku JP