| 发明名称 |
DEEP TRENCH AGEING OF SINGLE CRYSTAL SILICON |
| 摘要 |
A process is for deep trench, anisotropic plasma etching of single crystal silicon through an apertured mask of SiO2 or Si3N4 uses an atmosphere comprising a mixt. of NF3, a halofluorocarbon and opt. an inert gas.
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| 申请公布号 |
KR900003804(B1) |
申请公布日期 |
1990.05.31 |
| 申请号 |
KR19870004854 |
申请日期 |
1987.05.16 |
| 申请人 |
AIR PRODUCTS AND CHEMICAL INC. |
发明人 |
STENGER, HARVEY G. JR.;BARAANIC, JOHN A.;SELLUMUTHU, RAM;JACCODINE, RALPH |
| 分类号 |
C30B33/00;C23F4/00;C30B29/06;C30B33/12;H01L21/3065;H01L21/308;(IPC1-7):H01L21/145 |
主分类号 |
C30B33/00 |
| 代理机构 |
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代理人 |
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