| 摘要 |
A ferroelectric memory has a top electrode (12) a bottom electrode (14) and a grid electrode (18) having spaced conducting members located between the top electrode (12) and the bottom electrode (14). A ferroelectric material (16) is positioned between the top electrode and the bottom electrode. A dielectric material (20) is located immediately between the spaced coducting members of the grid electrode (18) and the top electrode (20). This forms ferroelectric fingers (22) which can be selectively polarized by applying a voltage between the top electrode and the grid electrode during reading of the memory cell (10). When the read operation is complete, the ferroelectric fingers (22) will spontaneously repolarize to the state of the rest of the continuous ferroelectric bulk (16). This results in a ferroelectric memory with nondestructive readout.
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