发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide a high density by almost eliminating useless region at a manufacturing step of cutting off from a large substrate and to reduce a disposal resin volume at a step of sealing the substrate by the resin in a case of specially sealing the substrate by a transfer molding method. SOLUTION: A large scale substrate on which surface has rectangular electric conductive patterns arranged at fixed interval and rectangular patterns having an electric conductivity and so arranged as to regularly project from the said patterns and which is provided with regions corresponding to elements, including at least two of a part of the electric conductive patterns and the rectangular patterns, is prepared. Semiconductor chips 12 are mounted on the large scale substrate, these electrodes and the conductive patterns or the rectangular patterns are junctioned by bonding wires 14, resin is formed on the surface of the large scale substrate, the semiconductor chips 12, the conductive patterns the rectangular patterns and the bonding wires 14 are sealed, the large scale substrate is cut off to correspond to the regions corresponding to the element and the element is formed.</p>
申请公布号 JPH11102924(A) 申请公布日期 1999.04.13
申请号 JP19970262160 申请日期 1997.09.26
申请人 SANYO ELECTRIC CO LTD 发明人 HYODO HARUO;TANI TAKAYUKI
分类号 H01L21/56;(IPC1-7):H01L21/56 主分类号 H01L21/56
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