SEMICONDUCTOR STORAGE DEVICE, DATA READ-OUT METHOD FROM SEMICONDUCTOR STORAGE DEVICE AND DATA STORAGE DEVICE

摘要

PROBLEM TO BE SOLVED: To provide the data read-out circuit for a semiconductor storage device capable of attaining the high speed in read-out of data and reducing power consumption. SOLUTION: A precharging operation is conducted by making one pair of bit lines BLSA to have an equal potential based on a recharge signalϕBR. A reading operation is conducted by amplifying cell information read out on the bit line BLSA with a sense amplifier 13. The bit line BL of a primary side is connected to the bit line BLSA of a secondary side via a first switching circuit 11 which makes them become nonconductive only for a fixed time from the activation of the sense amplifier 13. The bit line/BLSA of the secondary side is connected to the first bit line BLSA via second switching circuit 12 which makes them converter based on the precharge signalϕBR.