| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method for a semiconductor device, having an embedded wiring and plug which is capable of being highly integrated. SOLUTION: A gate electrode (wiring) 3, having the upper surface covered by a silicon nitride offset, is formed on a substrate 1, and a sidewall 5 consisting of silicon nitride is formed on a sidewall of the gate electrode 3 and an offset 4. An interlayer insulating film 7, consisting of silicon oxide, is formed on the substrate 1 in such a manner that the offset 4 and the side wall 5 are covered. The interlayer insulating film 7 is selectively removed by etching the offset 4 and the sidewall 5, using a resist pattern as a mask, a wiring groove 8 having the offset 4 as the bottom face is formed, and a connection hole 9 reaching the substrate 1 is formed. A conductive material 11 is filled into the wiring groove 8 and the connection hole 9, an upper layer wiring 11a is formed in the wiring groove 8, and a plug 11a is formed in the connection hole 9. |
