| 摘要 |
PROBLEM TO BE SOLVED: To provide a method by which a stencil mask that can improve pattern transfer reliability by limiting the number of pattern openings to the necessary minimum while maintaining a sufficient mechanical strength can be formed efficiently. SOLUTION: In the method of forming a stencil mask for charged particle beam exposure having an opening pattern, an outlining step of an outlining pattern expressed by prescribed pattern data, a discriminating step of discriminating whether or not each polygonal pattern expressed by the outlined pattern data is a convex polygon, and a pattern dividing step of dividing each polygonal pattern discriminated as a non-convex polygon into a plurality of pattern sections are executed. In addition, a distributing step of distributing the divided pattern sections to masks constituting a set of complementary masks is also performed. |
