发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To prevent the formation of a boundary except during word line switching even in the case of burst reading exceeding a page length. <P>SOLUTION: This device is provided with a row decoder 11 for selecting a word line according to a row address signal, a sense amplifier circuit group 14 divided by pages and constituted of a plurality of sense amplifier circuits for each page to sense data to be read-out to bit lines, column selection circuits 12 disposed between the bit line and the sense amplifier circuit group by a number equal to a page length for selecting a bit line according to an input signal to connect it to each sense amplifier circuit, a plurality of column decoders 13 disposed for each column selection circuit to output input signals supplied to the corresponding respective column selection circuits according to the column address signals, and an address control circuit 16 for controlling column address signals supplied to the plurality of column decoders according to the start page of a burst reading start among the memory cells for a plurality of pages in a memory cell array. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2005235335(A) 申请公布日期 2005.09.02
申请号 JP20040045107 申请日期 2004.02.20
申请人 TOSHIBA CORP 发明人 HONDA YASUHIKO
分类号 G11C16/02;G11C11/401;G11C11/407;G11C16/06;(IPC1-7):G11C16/02 主分类号 G11C16/02
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