Method of making semiconductor device with PN junction in stacking-fault free zone

摘要

In a method of making a semiconductor device, a semiconductor wafer having a stacking fault originally contained in the wafer or produced in the wafer through the thermal oxidation of the wafer surface is subjected to an annealing treatment in a non-oxidative atmosphere to eliminate the stacking fault. A PN junction is thereafter formed in an area of the wafer from which the stacking fault is eliminated.