| 摘要 |
PROBLEM TO BE SOLVED: To perform high-precision working, in deep hole working of an elliptic pattern, improving the lack of aperture property at a shorter diameter side caused by excessive deposition in initial etching. SOLUTION: In an insulating film dry etching method for treating a sample to be worked with an elliptic pattern mask formed while using fluorocarbon gases, an etching step is divided, from etching start, into a first step and a second step. In the first step, a polymer amount during etching is set less than that in the second step and a first step time is controlled in accordance with ellipticity of the elliptic pattern (a ratio in a long-diameter dimension to a short-diameter dimension). COPYRIGHT: (C)2008,JPO&INPIT
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