| 摘要 |
PROBLEM TO BE SOLVED: To provide a semmiconductor device of a virtual ground type flash memory which is easy to manufacture, and is highly integrated and miniturized in memory cells, and also to provide a method for manufacturing the same. SOLUTION: The semiconductor device of this invention comprises: a bit line 12 so arranged as to extend in a semiconductor substrate 10; a charge storage layer 16 arranged on the semiconductor substrate 10; a word line 22 so arranged on the charge storage layer 16 to cross the bit line 12 and extend; and a channel region 24 in the semiconductor substrate 10 directly under the word line 22 and located between the bit lines 12. The width W of the charge storage layer 16 arranged on the channel region 24 in the direction of the width of the word line 22 is narrowed from the end E of the channel region 24 towards the center of the channel region 24 in the word line 22 extension direction. COPYRIGHT: (C)2009,JPO&INPIT
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