| 摘要 |
A method of fabricating a RRAM includes: forming a bottom electrode; forming a first metal layer, a first metal oxide layer, and a second metal layer on the bottom electrode in sequence; performing an RTO process followed by a top electrode formation; oxidizing the first metal layer to a second metal oxide layer comprising a second oxygen content; and oxidizing the second metal layer to a third metal oxide layer comprising a third oxygen content; wherein the first metal oxide layer has a first oxygen content after the RTO process is performed, the third oxygen content being higher than the first oxygen content and the first oxygen content being higher than the second oxygen content.
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