SILICON CARBIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SILICON CARBIDE SEMICONDUCTOR DEVICE AND OXIDATION DIFFUSION DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device manufacturing method, a silicon carbide semiconductor device and an oxidation diffusion device, which can make an interface trap level density be the same level with an interface trap level density of a Si substrate and an oxide film.SOLUTION: A silicon carbide semiconductor device manufacturing method comprises: a heating process of heating oxygen and hydrogen before mixing oxygen and hydrogen: a burning process of burning the heated oxygen and hydrogen; and a deposition process of forming an oxide film on a silicon carbide substrate by using moisture vapor obtained by the burning as an oxidation agent.SELECTED DRAWING: Figure 1