| 摘要 |
PURPOSE:To apply a numerous barrier metal without considering close adhesion property with SiO2 by forming a barrier metallic layer having tight adhesive property with Si to the window of SiO2 on an Si substrate, shaping a metallic layer for an overoxide having tight adhesive property to both the window and the barrier metallic layer and further stacking a metallic layer. CONSTITUTION:A window is formed to the SiO2 film 2 on an Si substrate 1, and the barrier metals (such as Pt, Pd, Ir, Zn) 3, 3' having tight adhesive property with Si and non-adherent property with SiO2 are evaporated. The layer 3' on the SiO2 is simply peeled off and removed through ultrasonic washing. The metal (such as Al, Ti, Cr) 4 for shaping the overoxide having tight adhesive property with the layer 3 and the film 2 is evaporated, a metallic layer 5 made of Cu, Ni, etc. is evaporated in consideration of soldering, an Au layer 6 is stacked, oxidation is prevented, and the diode is completed through photoetching. According to this consititution, photoetching may be conducted at a time because the metal for the overoxide is determined in consideration of only tight adhesive property with SiO2. A metal which cannot be used because of defective tight adhesive property with SiO2 can also be adopted as the barrier metal. |
