| 摘要 |
The invention comprises a metal-oxide-semiconductor (MOS) capacitor formed on silicon carbide. By utilizing new techniques for obtaining single crystals and monocrystalline thin films of silicon carbide, and by positioning the ohmic contact and the metal contact on a common side of the silicon carbide semiconductor portion, devices are obtained which are commercially viable and which demonstrate reduced series resistance, lesser leakage current and greater capacitance than have previous devices formed on silicon carbide.
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