<p>This invention relates to an epitaxial wafer of a compound semiconductor comprising a heteroepitaxial crystal layer formed on a substrate comprising a compound semiconductor crystal, wherein the substrate is substantially circular and free from dislocation.</p>
申请公布号
EP0416128(A1)
申请公布日期
1991.03.13
申请号
EP19900904684
申请日期
1990.03.15
申请人
SUMITOMO ELECTRIC INDUSTRIES LIMITED
发明人
IWASAKI, T. OSAKA WORKS OF SUMITOMO ELECTRIC;YAMABAYASHI, N. OSAKA WORKS OF SUMITOMO ELECTRIC;MIURA, Y. ITAMI WORKS OF SUMITOMO ELECTRIC